Distributed Bragg Reflector (DBR) laser diodes are tunable single mode diodes. Our DBRs are available with 100mW of output at 1061 and 1063nm and 80mW at 1083nm. They are longitudinally and spatially single mode and can be tuned up to 100GHz mode-hop free. Applications that can benefit from the high output, stable wavelength, and narrow spectral width of these diodes include metrology, spectroscopy, and seeding of pulsed Nd:YAG lasers (1061 and 1063nm) and Yb-based lasers (1083nm). Seeding these lasers with a DBR diode laser yields a smooth temporal profile and a narrow linewidth.
The DBR laser chip is grown by MOVPE (metalorganic vapor phase epitaxy) of compound semiconductor material. As with our DFB diodes, a Bragg grating is integrated into the diode. However, instead of being etched into the gain medium of the chip, the grating is positioned outside the active region of the cavity. The grating acts as a mirror and reflects a single wavelength back into the cavity. The rear facet of the laser chip has a high reflection coating, while the front facet has an antireflection coating. |
